Theory of the random potential and conductivity at the surface of a topological insulator

Abstract

We study the disorder potential induced by random Coulomb impurities at the surface of a topological insulator (TI). We use a simple model in which positive and negative impurities are distributed uniformly throughout the bulk of the TI, and we derive the magnitude of the disorder potential at the TI surface using a self-consistent theory based on the Thomas-Fermi approximation for screening by the Dirac mode. Simple formulas are presented for the mean squared potential both at the Dirac point and far from it, as well as for the characteristic size of electron/hole puddles at the Dirac point and the total concentration of electrons/holes that they contain. We also derive an expression for the autocorrelation function for the potential at the surface and show that it has an unusually slow decay, which can be used to verify the bulk origin of disorder. The implications of our model for the electron conductivity of the surface are also presented.

6 pages, 2 figures; section about conductivity added

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• Filling of magnetic-impurity-induced gap in topological insulators by potential scattering
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• Current-induced breakdown of the quantum anomalous Hall effect
• Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder
• Disorder effects in topological insulator thin films
• Metallization and proximity superconductivity in topological insulator nanowires
• Disorder effects in topological insulator nanowires
• Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder
• Upper bound on the window of density occupied by microemulsion phases in two-dimensional electron systems
• Ambipolar magneto-optical response of ultra-low carrier density topological insulators
• Characterizing the chemical potential disorder in the topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$ thin films
• Hydrodynamics of the electronic Fermi liquid: a pedagogical overview
• Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$