481 citations · 5.2k across the 95 of their papers we have counts for
95 papers
Half century of Efros-Shklovskii Coulomb gap. Romance with Coulomb interaction and disorder
B. I. Shklovskii
Efros-Shklovskii (ES) Coulomb gap in density of localized states and ES law of the variable range hopping conductivity were coined 50 years ago. The theory and its first confirmati…
Electron binding energy of a donor in bilayer graphene with gate-tunable gap
E. V. Gorbar, V. P. Gusynin, D. O. Oriekhov +1
In gapped bilayer graphene, similarly to conventional semiconductors, Coulomb impurities (such as nitrogen donors) may determine the activation energy of its conductivity and provi…
Why monovalent salt reduces charge inversion of macroion by trivalent counterions
Boris Shklovskii
A macroion with a strongly charged negative surface in 3:1 salt water solution becomes net positive due to adsorption of an excessive number of positive 3-ions. The widely accepted…
Biexciton crystal in a two-dimensional semiconductor heteropentalayer
Yi Huang, B. I. Shklovskii
This paper is written for the Special Issue in Honor of Emmanuel Rashba. We study the gas of indirect dipolar excitons created by an interband illumination of a pentalayer WSe/…
Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells
Yi Huang, B. I. Shklovskii, M. A. Zudov
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contribu…
Plasmons in semiconductor and topological insulator wires with large dielectric constant
Yi Huang, Chao-Hsiang Sheu, B. I. Shklovskii
The dispersion law of plasmons running along thin wires with radius is known to be practically linear. We show that in a wire with a dielectric constant much larger than th…