Disorder From the Bulk Ionic Liquid in Electric Double Layer Transistors

Abstract

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

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• Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films
• Charge-Density Waves vs. Superconductivity: Some Results and Future Perspectives
• In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr
• Nanoscale electronic transparency of wafer-scale hexagonal boron nitride
• On the formation of a conducting surface channel by ionic liquid gating of an insulator
• Ionic liquid gating of InAs nanowire-based field effect transistors
• Theory of cross quantum capacitance