Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

Abstract

We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature.

References in corpus (5)

• The electronic properties of graphene
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Tunneling Spin Injection into Single Layer Graphene
• Contact induced spin relaxation in Hanle spin precession measurements
• Spin accumulation probed in multiterminal lateral all-metallic devices

Cited by in corpus (5)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Spin communication over 30 $\mu$m long channels of chemical vapor deposited graphene on SiO${}_2$
• Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene
• Spin transport in graphene nanostructures
• Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers