Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
arXiv:1506.04582 · doi:10.1063/1.4820586
Abstract
We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature.
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- Spin precession in anisotropic media
- Magneto-optical conductivity of graphene on polar substrates
- Spin communication over 30 m long channels of chemical vapor deposited graphene on SiO
- Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene
- Spin transport in graphene nanostructures
- Probing Tunneling Spin Injection into Graphene via Bias Dependence
- Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
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