The influence of defects on the conductivity of graphene within the effective theory approach
arXiv:1308.2094 · doi:10.1134/S0021364013200150
Abstract
The results of the simulations by Monte Carlo method of graphene with structural defects are presented. The calculations are performed within an effective quantum field theory with non-compact $3\hm + 1$--dimensional Abelian gauge field and $2\hm + 1$--dimensional Kogut-Susskind fermions. It was found that defects shift the phase transition point semimetal-insulator towards higher values of a substrate permittivity.
arXiv comment4 pages, 3 figures
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Is graphene in vacuum an insulator?
- How close can one approach the Dirac point in graphene experimentally?
- Monte-Carlo study of the semimetal-insulator phase transition in monolayer graphene with realistic inter-electron interaction potential
- Quantum Critical Behaviour in a Graphene-like Model
- Numerical study of the conductivity of graphene monolayer within the effective field theory approach