Direct visualization and effects of atomic-scale defects on the optoelectronic properties of hexagonal boron nitride
arXiv:2202.05636 · doi:10.1002/aelm.202001177
Abstract
Hexagonal boron nitride (hBN) is attracting a lot of attention in the last years, thanks to its many remarkable properties. These include the presence of single-photon emitters with superior optical properties, which make it an ideal candidate for a plethora of photonic technologies. However, despite the large number of experimental results and theoretical calculations, the structure of the defects responsible for the observed emission is still under debate. In this work, we visualize individual atomic-scale defects in hBN with atomic force microscopy under ambient conditions and observe multiple narrow emission lines from optically stable emitters. This direct observation of the structure of the defects combined with density functional theory calculations of their band structures and electronic properties allows us to associate the existence of several single-photon transitions to the observed defects. Our work sheds light on the origin of single-photon emission in hBN that is important for the understanding and tunability of high-quality emitters in optoelectronics and quantum technologies.
References in corpus (24)
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Boron nitride substrates for high-quality graphene electronics
- Mechanical Properties of Atomically Thin Boron Nitride and the Role of Interlayer Interactions
- Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets
- Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
- SIESTA: recent developments and applications
- Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
- Mechanical Isolation of Highly Stable Antimonene under Ambient Conditions
- Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
- Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
- Color centers in hexagonal boron nitride monolayers: A group theory and ab-initio analysis
- Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride
- Coupling of excitons and defect states in boron-nitride nanostructures
- Efficient single photon emission from a high-purity hexagonal boron nitride crystal
- Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation
- Piezoelectricity in monolayer hexagonal boron nitride
- Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride
- Understanding and calibrating Density-Functional-Theory calculations describing the energy and spectroscopy of defect sites in hexagonal boron nitride
- Direct Measurement of Quantum Efficiency of Single Photon Emitters in Hexagonal Boron Nitride
- Imaging of optically active defects with nanometer resolution
- Coupling of deterministically activated quantum emitters in hexagonal boron nitride to plasmonic surface lattice resonances
- Single Photon Emitters in Boron Nitride: More Than a Supplementary Material
- The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride