The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

Abstract

Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations.

arXiv comment10 pages, 4 figures

References in corpus (2)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals

Cited by in corpus (4)

• Mechanosensitive ion permeation across sub-nanoporous MoS${}_2$ monolayers
• Direct visualization and effects of atomic-scale defects on the optoelectronic properties of hexagonal boron nitride
• Ion transport across solid-state ion channels perturbed by directed strain
• Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride