Tunable ferroelectricity in hBN intercalated twisted double-layer graphene

Abstract

Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which demonstrating high room temperature mobility of the order of 10 m${}^2$V${}^{-1}$s${}^{-1}$ and exhibits robust ambipolar switching in response to the external electric field. The observed hysteresis is tunable, reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a route for developing novel phase-changing devices.

References in corpus (11)

• The electronic properties of graphene
• Boron nitride substrates for high-quality graphene electronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Stacking-engineered ferroelectricity in bilayer boron nitride
• Interfacial Ferroelectricity by van-der-Waals Sliding
• High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
• Strong Coulomb drag and broken symmetry in double-layer graphene
• Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride
• High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices
• Composite super-moiré lattices in double aligned graphene heterostructures
• Chirality-dependent phonon-limited resistivity in multiple layers of graphene

Cited by in corpus (5)

• Across-Layer Sliding Ferroelectricity in Graphene-Based Heterolayers: Asymmetry of Next Neighbor Interlayer Couplings
• Unveiling the origin of unconventional moire ferroelectricity
• Adhesion and Reconstruction of Graphene/Hexagonal Boron Nitride Heterostructures: A Quantum Monte Carlo Study
• On the origin of anomalous hysteresis in graphite/boron nitride transistors
• Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking