Piezoelectricity and valley Chern number in inhomogeneous hexagonal 2D crystals
arXiv:1707.03769 · doi:10.1038/s41699-018-0061-7
Abstract
Conversion of mechanical forces to electric signal is possible in non-centrosymmetric materials due to linear piezoelectricity. The extraordinary mechanical properties of two-dimensional materials and their high crystallinity make them exceptional platforms to study and exploit the piezoelectric effect. Here, the piezoelectric response of non-centrosymmetric hexagonal two-dimensional crystals is studied using the modern theory of polarization and model Hamiltonians. An analytical expression for the piezoelectric constant is obtained in terms of topological quantities such as the {\it valley Chern number}. The theory is applied to semiconducting transition metal dichalcogenides and hexagonal Boron Nitride. We find good agreement with available experimental measurements for MoS. We further generalise the theory to study the polarization of samples subjected to inhomogeneous strain (e.g.~nanobubbles). We obtain a simple expression in terms of the strain tensor, and show that charge densities can be induced by realistic inhomogeneous strains, .
arXiv comment14 pages, 3 figures
References in corpus (33)
- Berry Phase Effects on Electronic Properties
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Local strain engineering in atomically thin MoS2
- Detecting Topological Currents in Graphene Superlattices
- Large-scale quantum-emitter arrays in atomically thin semiconductors
- Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
- Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
- Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Artificial graphene as a tunable Dirac material
- Valley Chern Numbers and Boundary Modes in Gapped Bilayer Graphene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
- Graphene bubbles on a substrate : Universal shape and van der Waals pressure
- Generating quantizing pseudomagnetic fields by bending graphene ribbons
- Strain-induced spatial and spectral isolation of quantum emitters in mono- and bi-layer WSe2
- Electric Polarization of Heteropolar Nanotubes as a Geometric Phase
- Strong modulation of optical properties in black phosphorus through strain-engineered rippling
- Effective lattice Hamiltonian for monolayer MoS2 : Tailoring electronic structure with perpendicular electric and magnetic fields
- Importance of second-order piezoelectric effects in zincblende semiconductors
- Topological Berry phase and semiclassical quantization of cyclotron orbits for two dimensional electrons in coupled band models
- Theory of strain in single-layer transition metal dichalcogenides
- Theory of 2D crystals: graphene and beyond
- Gaps tunable by electrostatic gates in strained graphene
- Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch
- Synthetic electric fields and phonon damping in carbon nanotubes and graphene
- Observation of Landau level-like quantizations at 77 K along a strained-induced graphene ridge
- Edge modes in zigzag and armchair ribbons of monolayer MoS
- Piezoelectricity in planar boron nitride via a geometric phase
- Topological electric current from time-dependent elastic deformations in graphene
- Piezoelectricity in two-dimensional materials: a comparative study between lattice dynamics and ab-initio calculations
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- Piezoelectricity in monolayer hexagonal boron nitride
- Transport in two-dimensional topological materials: recent developments in experiment and theory
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- Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS/MoS and WSe/MoSe bilayers
- Flat bands, strains, and charge distribution in twisted-bilayer hBN
- Phonon helicity induced by electronic Berry curvature in Dirac materials
- Strain-induced gauge and Rashba fields in ferroelectric Rashba lead chalcogenide PbX monolayers (X = S, Se, Te)
- Band energy landscapes in twisted homobilayers of transition metal dichalcogenides
- Piezoelectricity and Topological Quantum Phase Transitions in Two-Dimensional Spin-Orbit Coupled Crystals with Time-Reversal Symmetry
- Dynamical Piezomagnetic Effect in Time-Reversal Invariant Weyl Semimetals with Axionic Charge-Density Waves
- Tight-binding Piezoelectric Theory and Electromechanical Coupling Correlations for Transition Metal Dichalcogenide Monolayers
- Impact of atomic reconstruction on optical spectra of twisted TMD homobilayers
- Nonlinear exciton drift in piezoelectric two-dimensional materials
- Strain field in graphene induced by nanopillar mesh
- Third-order Optical Nonlinearity in Two-dimensional Transition Metal Dichalcogenides
- Pseudo-gauge Fields in Dirac and Weyl Materials
- Polarization and charge-separation of moiré excitons in van der Waals heterostructures
- Defects-Assisted Piezoelectric Response in Liquid Exfoliated MoS2 Nanosheets
- Curvature as an external field in mechanical antiferromagnets
- Theory of the Strain-Induced Magnetoelectric Effect in Planar Dirac Systems
- Quantum Nonlinear Acoustic Hall Effect and Inverse Acoustic Faraday Effect in Dirac Insulators
- Comment on "Piezoelectricity in planar boron nitride via a geometric phase"
- Twisted Type-II Rashba Homobilayer: A Platform for Tunable Topological Flat Bands
- Origin of Moiré Potentials in WS/WSe Heterobilayers: Contributions from Lattice Reconstruction and Interlayer Charge Transfer
- Strain-induced exciton mobility in layered WS2 from first principles