Theory of the Strain-Induced Magnetoelectric Effect in Planar Dirac Systems
arXiv:1711.09917 · doi:10.1103/PhysRevB.97.235128
Abstract
The magnetoelectric response in inversion-breaking two dimensional Dirac systems induced by strain is analyzed. It is shown that, in the same way that the piezoelectric response in these materials is related to the valley Chern number, the strain-induced magnetoelectric effect is related both to the non trivial Berry curvature and the derivative of the orbital magnetic moment per valley. This phenomenon allows to locally induce and control charge densities by an external magnetic field in strained zones of the sample.
7 pages, 2 figures
References in corpus (11)
- Topological Field Theory of Time-Reversal Invariant Insulators
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Berry phase effect in anomalous thermoelectric transport
- Orbital magnetization in periodic insulators
- Generation and Electric Control of Spin-Coupled Valley Current in WSe2
- Charge inhomogeneities due to smooth ripples in graphene sheets
- Valley Magnetoelectricity in Single-Layer MoS2
- Piezoelectricity and valley Chern number in inhomogeneous hexagonal 2D crystals
- Tunable axial gauge fields in engineered Weyl semimetals: Semiclassical analysis and optical lattice implementations
- Nonlocal Optical Response in Topological Phase Transitions in the Graphene Family
Cited by in corpus (4)
- Topological Nonlinear Anomalous Nersnt Effect in Strained Transition Metal Dichalcogenides
- Electron transport properties of graphene nanoribbons with Gaussian deformation
- Quantum Nonlinear Acoustic Hall Effect and Inverse Acoustic Faraday Effect in Dirac Insulators
- Current response to axial gauge fields in noncentrosymmetric magnetic Weyl semimetals