Piezoelectricity in planar boron nitride via a geometric phase

Abstract

Due to their low surface mass density, two-dimensional materials with a strong piezoelectric response are interesting for nanoelectromechanical systems with high force sensitivity. Unlike graphene, the two sublattices in a monolayer of hexagonal boron nitride (hBN) are occupied by different elements, which breaks inversion symmetry and allows for piezoelectricity. This has been confirmed with density functional theory calculations of the piezoelectric constant of hBN. Here, we formulate an entirely analytical derivation of the electronic contribution to the piezoelectric response in this system based on the concepts of strain-induced pseudomagnetic vector potential and the modern theory of polarization that relates the polar moment to the Berry curvature. Our findings agree with the symmetry restrictions expected for the hBN lattice and reproduce well the magnitude of the piezoelectric effect previously obtained ab-initio.

arXiv comment6 pages, 1 figure

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• Piezospintronic effect in honeycomb antiferromagnets
• Designing 1D correlated-electron states by non-Euclidean topography of 2D monolayers
• Dynamical Piezomagnetic Effect in Time-Reversal Invariant Weyl Semimetals with Axionic Charge-Density Waves
• Revealing Ultrafast Phonon Mediated Inter-Valley Scattering through Transient Absorption and High Harmonic Spectroscopies
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• Tight-binding Piezoelectric Theory and Electromechanical Coupling Correlations for Transition Metal Dichalcogenide Monolayers
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• Pseudo-gauge Fields in Dirac and Weyl Materials
• Theory of the Strain-Induced Magnetoelectric Effect in Planar Dirac Systems
• Quantum Nonlinear Acoustic Hall Effect and Inverse Acoustic Faraday Effect in Dirac Insulators
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