\emph{Ab initio} theory of ${\text{N}}_2\text{V}$ defect as quantum memory in diamond

Abstract

${\text{N}}_2\text{V}$ defect in diamond is characterized by means of \emph{ab initio} methods relying on density functional theory calculated parameters of a Hubbard model Hamiltonian. It is shown that this approach appropriately describes the energy levels of correlated excited states induced by this defect. By determining its critical magneto-optical parameters, we propose to realize a long-living quantum memory by ${\text{N}}_2\text{V}$ defect in diamond.

4 figures and 5 tables

References in corpus (5)

• Dynamic polarization of single nuclear spins by optical pumping of NV color centers in diamond at room temperature
• \emph{Ab initio} calculation of spin-orbit coupling for NV center in diamond exhibiting dynamic Jahn-Teller effect
• Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
• Electron paramagnetic resonance of the ${\mathrm{N}}_2{\mathrm{V}}^{-}$ defect in ${}^{15}\mathrm{N}$-doped synthetic diamond
• High fidelity bi-directional nuclear qubit initialization in SiC

Cited by in corpus (3)

• Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation
• Possible nanophotonics applications of the $V_N{N}_B$ defect in hexagonal boron nitride
• The $N_{2}V$ color center: a ubiquitous visible and near-infrared-II quantum emitter in nitrogen-doped diamond