294 citations · 1.1k across the 25 of their papers we have counts for
25 papers
Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles
Péter Udvarhelyi
Bond reconstruction in vacancy-related structures affects their formation energies, symmetries, and electronic and optical properties. Using density functional theory, we investiga…
First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon
Péter Udvarhelyi
Spin-active color centers are the basis of solid-state defect systems utilized in quantum technologies. Although silicon is an emerging host material for quantum defects, there is…
Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
Péter Udvarhelyi, Prineha Narang
Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Quantum communication networks with defects in silicon carbide
Philipp Sohr, Philipp Koller, Sebastian Ecker +23
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Johannes Aberl, Enrique Prado Navarrete, Merve Karaman +12
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC…
Precise characterization of a silicon carbide waveguide fiber interface
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…
Strain Engineering for Transition Metal Defects in SiC
Benedikt Tissot, Péter Udvarhelyi, Adam Gali +1
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optica…
Solid state defect emitters with no electrical activity
Pei Li, Song Li, Péter Udvarhelyi +2
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-ga…
The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
Meysam Mohseni, Péter Udvarhelyi, Gergő Thiering +1
Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary an…
Optically-active spin defects in few-layer thick hexagonal boron nitride
A. Durand, T. Clua-Provost, F. Fabre +11
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to t…
Carbon cluster emitters in silicon carbide
Pei Li, Péter Udvarhelyi, Song Li +2
Defect qubits in 4H-SiC are outstanding candidates for numerous applications in the rapidly emerging field of quantum technology. Carbon clusters can act as emission sources that m…
Ultraviolet quantum emitters in -BN from carbon clusters
Song Li, Anton Pershin, Gergő Thiering +2
Ultraviolet (UV) quantum emitters in hexagonal boron nitride (hBN) have generated considerable interest due to their outstanding optical response. Recent experiments have identifie…
\emph{Ab initio} study of (100) diamond surface spins
Jyh-Pin Chou, Péter Udvarhelyi, Nathalie P. de Leon +1
Unpaired electronic spins at diamond surfaces are ubiquitous and can lead to excess magnetic noise. They have been observed in several studies to date, but their exact chemical nat…
Detection of single W-centers in silicon
Yoann Baron, Alrik Durand, Péter Udvarhelyi +13
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts…
Identification of a telecom wavelength single photon emitter in silicon
Péter Udvarhelyi, Bálint Somogyi, Gergő Thiering +1
We identify the exact microscopic structure of the G photoluminescence center in silicon by first principles calculations with including a self-consistent many-body perturbation me…
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
Naoya Morioka, Charles Babin, Roland Nagy +17
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, i…
Giant shift upon strain on the fluorescence spectrum of VN color centers in -BN
Song Li, Jyh-Pin Chou, Alice Hu +5
We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (-BN), a color center that may be employed as a quantum…
Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
Péter Udvarhelyi, Gergő Thiering, Naoya Morioka +9
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore…
Electrically driven optical interferometry with spins in silicon carbide
Kevin C. Miao, Alexandre Bourassa, Christopher P. Anderson +11
Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence…
Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
Péter Udvarhelyi, Roland Nagy, Florian Kaiser +3
Scalable spin-to-photon interfaces require quantum emitters with strong optical transition dipole moment and low coupling to phonons and stray electric fields. It is known that par…
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Roland Nagy, Matthias Niethammer, Matthias Widmann +14
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. He…
\emph{Ab initio} spin-strain coupling parameters of divacancy qubits in silicon carbide
Péter Udvarhelyi, Adam Gali
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications,…
Spin-strain interaction in nitrogen-vacancy centers in diamond
Péter Udvarhelyi, Vladyslav O. Shkolnikov, Adam Gali +2
The interaction of solid-state electronic spins with deformations of their host crystal is an important ingredient in many experiments realizing quantum information processing sche…