5 papers
Giant shift upon strain on the fluorescence spectrum of VN color centers in -BN
Song Li, Jyh-Pin Chou, Alice Hu +5
We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (-BN), a color center that may be employed as a quantum…
Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
Péter Udvarhelyi, Gergő Thiering, Naoya Morioka +9
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore…
Electrically driven optical interferometry with spins in silicon carbide
Kevin C. Miao, Alexandre Bourassa, Christopher P. Anderson +11
Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence…
Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
Péter Udvarhelyi, Roland Nagy, Florian Kaiser +3
Scalable spin-to-photon interfaces require quantum emitters with strong optical transition dipole moment and low coupling to phonons and stray electric fields. It is known that par…
\emph{Ab initio} spin-strain coupling parameters of divacancy qubits in silicon carbide
Péter Udvarhelyi, Adam Gali
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications,…