294 citations · 1.1k across the 25 of their papers we have counts for
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Strain Engineering for Transition Metal Defects in SiC
Benedikt Tissot, Péter Udvarhelyi, Adam Gali +1
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optica…
Solid state defect emitters with no electrical activity
Pei Li, Song Li, Péter Udvarhelyi +2
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-ga…
The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
Meysam Mohseni, Péter Udvarhelyi, Gergő Thiering +1
Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary an…
Optically-active spin defects in few-layer thick hexagonal boron nitride
A. Durand, T. Clua-Provost, F. Fabre +11
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to t…
Carbon cluster emitters in silicon carbide
Pei Li, Péter Udvarhelyi, Song Li +2
Defect qubits in 4H-SiC are outstanding candidates for numerous applications in the rapidly emerging field of quantum technology. Carbon clusters can act as emission sources that m…