activity
20172026
most citedHigh-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

294 citations · 1.1k across the 25 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2026

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles

Péter Udvarhelyi

Bond reconstruction in vacancy-related structures affects their formation energies, symmetries, and electronic and optical properties. Using density functional theory, we investiga…

cond-mat.mtrl-sci2026

First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon

Péter Udvarhelyi

Spin-active color centers are the basis of solid-state defect systems utilized in quantum technologies. Although silicon is an emerging host material for quantum defects, there is…

cond-mat.mtrl-sci2023★ 1 cited

Solid state defect emitters with no electrical activity

Pei Li, Song Li, Péter Udvarhelyi +2

Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-ga…

cond-mat.mtrl-sci2020★ 56 cited

Giant shift upon strain on the fluorescence spectrum of VN color centers in -BN

Song Li, Jyh-Pin Chou, Alice Hu +5

We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (-BN), a color center that may be employed as a quantum…

cond-mat.mtrl-sci2017★ 15 cited

\emph{Ab initio} theory of defect as quantum memory in diamond

Péter Udvarhelyi, Gergő Thiering, Elisa Londero +1

defect in diamond is characterized by means of \emph{ab initio} methods relying on density functional theory calculated parameters of a Hubbard model Hamilto…