\emph{Ab initio} spin-strain coupling parameters of divacancy qubits in silicon carbide

Abstract

Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications, where divacancy qubit, that is similar to the negatively charged nitrogen-vacancy (NV) center in diamond, has favorable coherence properties. We demonstrate by means of density functional theory calculations that divacancy in 3C SiC has superior spin-stress coupling parameters and stress sensitivity for nanoscale, quantum enhanced photonic, optoelectronic and optomechanical devices.

arXiv comment5 pages, 2 figures

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Cited by in corpus (13)

• Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Optically detected spin-mechanical resonance in silicon carbide membranes
• Stress-controlled zero-field spin splitting in silicon carbide
• Thermal evolution of silicon carbide electronic bands
• Spectroscopy Study on NV Sensors in Diamond-based High-pressure Devices
• Precise characterization of a silicon carbide waveguide fiber interface
• Directional Detection of Dark Matter Using Solid-State Quantum Sensing
• Probing the Evolution of Electron Spin Wavefunction of NV Center in diamond via Pressure Tuning
• Theory of Spin-Acoustic Resonance for Spin-3/2 Si Vacancy with $C_{3v}$ Site Symmetry in Silicon Carbide
• Theory of Magnetoacoustic Resonance to Probe Multipole Effects Due to a Crystal Field Quartet