Electrically and mechanically tunable electron spins in silicon carbide color centers

Abstract

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.

10 pages, 4 figures, 1 table

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• Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
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• Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
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• Spin and optical properties of silicon vacancies in silicon carbide (a review)
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• Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study
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• Wide-Field Strain Imaging with Preferentially-Aligned Nitrogen-Vacancy Centers in Polycrystalline Diamond
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