218 citations · 698 across the 13 of their papers we have counts for
13 papers
Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin and charge state initialization
Daniel Wirtitsch, Georg Wachter, Sarah Reisenbauer +6
We propose and experimentally demonstrate a method to strongly increase the sensitivity of spin measurements on nitrogen-vacancy (NV) centers in diamond, which can be readily imple…
First-principles computational methods for quantum defects in two-dimensional materials: A perspective
Hosung Seo, Viktor Ivády, Yuan Ping
Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters (SPEs) and spin qubits. Recently, two…
Symmetric carbon tetramers forming chemically stable spin qubits in hBN
Zsolt Benedek, Rohit Babar, Ádám Ganyecz +4
Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and t…
Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond
Omkar Dhungel, Till Lenz, Muhib Omar +8
We study cross-relaxation features near zero magnetic field with ensembles of nitrogen-vacancy (NV) centers in diamond and examine their properties in samples with a range (0.9 ppm…
Exhaustive characterization of modified Si vacancies in 4H-SiC
Joel Davidsson, Rohit Babar, Danial Shafizadeh +4
The negatively charged silicon vacancy () in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of en…
Coherent dynamics of multi-spin centers in hexagonal boron nitride
W. Liu, V. Ivády, Z. -P. Li +18
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sen…