Vector magnetometry based on S=3/2 electronic spins
arXiv:1505.06914 · doi:10.1103/PhysRevB.92.115201
Abstract
Electronic spin systems with S>1/2 provide an efficient method for DC vector magnetometry, since the conventional electron spin resonance spectra at a given magnetic field reflect not only the field strength but also orientation in the presence of strong spin-spin interactions. S=1 spins, e.g. the nitrogen-vacancy centers in diamond, have been intensively investigated for such a purpose. In this report, we compare S=1 and S=3/2 spins, and discuss how one can apply general principles for the use of high spin systems as a vector magnetometer to the S=3/2 spin systems. We find analytical solutions which allow a reconstruction of the magnetic field strength and polar angle using the observed resonance transitions if an uniaxial symmetry exists for the spin-spin interaction as in S=1 systems. We also find that an ambiguity of determining the field parameters may arise due to the unique properties of S=3/2 systems, and present solutions for it utilizing additional transitions in the low-field region. The electronic spins of the silicon vacancy in silicon carbide will be introduced as a model for the S=3/2 DC vector magnetometer and the practical usage of it, including the magic-angle spinning type method, will be presented too.
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- Spin and optical properties of silicon vacancies in silicon carbide (a review)
- Influence of irradiation on defect spin coherence in silicon carbide
- DC Magnetometry at the Limit
- Optimal and Variational Multi-Parameter Quantum Metrology and Vector Field Sensing
- Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
- Self-calibrating vector atomic magnetometry through microwave polarization reconstruction
- Optimal Generators for Quantum Sensing
- Identification and control of electron-nuclear spin defects in diamond
- Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
- Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
- Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
- Level-crossing induced spin phenomena in SiC: a theoretical study
- Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
- Spin squeezing an ultracold molecule