Single-Spin Readout and Quantum Sensing using Optomechanically Induced Transparency
arXiv:2212.01481 · doi:10.1103/PhysRevLett.130.093603
Abstract
Solid-state spin defects are promising quantum sensors for a large variety of sensing targets. Some of these defects couple appreciably to strain in the host material. We propose to use this strain coupling for mechanically-mediated dispersive single-shot spin readout by an optomechanically-induced transparency measurement. Surprisingly, the estimated measurement times for negatively-charged silicon-vacancy defects in diamond are an order of magnitude shorter than those for single-shot optical fluorescence readout. Our scheme can also be used for general parameter-estimation metrology and offers a higher sensitivity than conventional schemes using continuous position detection.
7+19 pages, 3+4 figures, equivalent to published version
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