Quantum metrology with a single spin-$3/2$ defect in silicon carbide

Abstract

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-3/2 semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single ${\text{V}}_{\text{Si}}^{-}$ defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. The concepts and sensing schemes developed here are applicable to other point defects with half spin multiplet ($S\ge 3/2$) configuration.

5 pages, 4 figures, 1 Supplementary file

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Cited by in corpus (19)

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• High-Resolution NMR Spectroscopy at Large Fields with Nitrogen Vacancy Centers
• Single-Spin Readout and Quantum Sensing using Optomechanically Induced Transparency
• Exhaustive characterization of modified Si vacancies in 4H-SiC
• Optically detected spin-mechanical resonance in silicon carbide membranes
• Precise characterization of a silicon carbide waveguide fiber interface
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
• Extending qubit coherence by adaptive quantum environment learning
• Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
• Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
• Level-crossing induced spin phenomena in SiC: a theoretical study
• Theory of Spin-Acoustic Resonance for Spin-3/2 Si Vacancy with $C_{3v}$ Site Symmetry in Silicon Carbide
• Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field
• Spectroscopy and Coherent Control of Two-Level System Defect Ensembles Using a Broadband 3D Waveguide
• Optical and Strain Stabilization of Point Defects in Silicon Carbide