111 citations · 514 across the 21 of their papers we have counts for
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cond-mat.mes-hall2015★ 111 cited
Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces
Ö. O. Soykal, Pratibha Dev, Sophia E. Economou
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the mult…
cond-mat.mes-hall2015★ 99 cited
Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
S. G. Carter, Ö. O. Soykal, Pratibha Dev +2
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected…