Transmission in graphene-topological insulator heterostructures
arXiv:1701.02532 · doi:10.1103/PhysRevB.95.115424
Abstract
We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of a BiSe-like topological insulator. We present a low-energy model for the bulk graphene-topological insulator heterostructure and we calculate the transmission probability at zigzag and armchair edges of the deposited graphene, and the conductance through graphene nanoribbon barriers and show that its features can be understood from antiresonances in the transmission probability.
arXiv comment11 pages, 12 figures, 1 table
References in corpus (26)
- The electronic properties of graphene
- Topological Insulators
- Topological insulators and superconductors
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators in Three Dimensions
- Topological Insulators with Inversion Symmetry
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Electronic States of Graphene Nanoribbons
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
- Electronic states and Landau levels in graphene stacks
- Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3
- Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2
- Observation of Single Dirac Cone Topological Surface State in Compounds TlBiTe2 and TlBiSe2 from a New Topological Insulator Family
- Transmission through a biased graphene bilayer barrier
- Proximity effect in graphene-topological insulator heterostructures
- Proximity-induced giant spin-orbit interaction in epitaxial graphene on topological insulator
- Transmission through a boundary between monolayer and bilayer graphene
- Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions
- Enhancement of electron-hole superfluidity in double few-layer graphene
- Tunneling in graphene-topological insulator hybrid devices
- Experimental Observation of Two Massless Dirac-Fermion Gases in Graphene-Topological Insulator Heterostructure
- Stacking dependence of carrier-interactions in multilayer graphene systems
Cited by in corpus (4)
- Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
- Twist-angle dependent proximity induced spin-orbit coupling in graphene/topological insulator heterostructures
- Magic angle conditions for twisted 3D topological insulators
- Proximity-Induced Spin-Orbit Coupling in Graphene-BiSbTeSe Heterostructures