Stacking dependence of carrier-interactions in multilayer graphene systems
arXiv:1503.00212 · doi:10.1103/PhysRevB.92.041411
Abstract
We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena of the momentum-direction dependent intersite phases determined by the stacking sequence. Using this method, we calculate and compare the self-energies, density--density response functions, collective modes, and ground-state energies of several different few layer graphene systems. The influence of electron--electron interactions on important electronic properties can be understood in terms of competition between intraband exchange, interband exchange and correlation contributions that vary systematically with stacking arrangement.
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Cited by in corpus (8)
- Spatially-indirect Exciton Condensate Phases in Double Bilayer Graphene
- Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers
- Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene
- Ferromagnetism in chiral multilayer 2D semimetals
- Chirality and correlations in the spontaneous spin-valley polarization of rhombohedral multilayer graphene
- Broken sublattice symmetry states in Bernal stacked multilayer graphene
- Transmission in graphene-topological insulator heterostructures
- Plasmons in N-layer systems