activity
20042020
most citedAnomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions

282 citations · 433 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2020★ 13 cited

Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces

Fatima Ibrahim, Ali Hallal, Alan Kalitsov +3

The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-tr…

cond-mat.mtrl-sci2013★ 31 cited

Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers

Alan Kalitsov, Pierre-Jean Zermatten, Frédéric Bonell +5

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the ef…

cond-mat.mtrl-sci2013★ 2 cited

Electric-field-induced magnetization changes in Co/Al2O3 granular multilayers

Ajeesh M. Sahadevan, Alan Kalitsov, Gopinadhan Kalon +3

We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magne…

cond-mat.mtrl-sci2012★ 3 cited

Tunneling behavior of bismuth telluride nanoplates in electrical transport

Mustafa Eginligil, Weiqing Zhang, Alan Kalitsov +2

We study the electrical transport properties of ensembles of bismuth telluride (Bi2Te3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi2Te3 nanoplat…

cond-mat.mtrl-sci2012★ 67 cited

The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene

Gopinadhan Kalon, Young Jun Shin, Viet Giang Truong +2

Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements ac…

cond-mat.mtrl-sci2009

Voltage induced control and magnetoresistance of noncollinear frustrated magnets

A. Kalitsov, M. Chshiev, B. Canals +1

Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It i…