Compressibility of graphene
arXiv:1011.0995 · doi:10.1103/PhysRevB.83.085429
Abstract
We develop a theory for the compressibility and quantum capacitance of disordered monolayer and bilayer graphene including the full hyperbolic band structure and band gap in the latter case. We include the effects of disorder in our theory, which are of particular importance at the carrier densities near the Dirac point. We account for this disorder statistically using two different averaging procedures: first via averaging over the density of carriers directly, and then via averaging in the density of states to produce an effective density of carriers. We also compare the results of these two models with experimental data, and to do this we introduce a model for inter-layer screening which predicts the size of the band gap between the low-energy conduction and valence bands for arbitary gate potentials applied to both layers of bilayer graphene. We find that both models for disorder give qualitatively correct results for gapless systems, but when there is a band gap at charge neutrality, the density of states averaging is incorrect and disagrees with the experimental data.
10 pages, 7 figures, RevTeX
References in corpus (10)
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Asymmetry gap in the electronic band structure of bilayer graphene
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Ground-state of graphene in the presence of random charged impurities
- Density dependent exchange contribution to in extrinsic graphene
- Measurement of the electronic compressibility of bilayer graphene
- Insulating behavior in metallic bilayer graphene: Interplay between density inhomogeneity and temperature
- Electronic compressibility of a graphene bilayer
- Compressibility of bilayer graphene