Nonlocal Response and Anamorphosis: the Case of Few-Layer Black Phosphorus

Abstract

Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from other atomically thin crystals is its structural in-plane anisotropy which manifests in strongly anisotropic transport characteristics. However, traditional angle-resolved conductance measurements present a challenge for nanoscale systems such as black phosphorus, calling for new approaches in precision studies of transport anisotropy. Here we show that the nonlocal response, being exponentially sensitive to the anisotropy value, provides a powerful tool for determining the anisotropy. This is established by combining measurements of the orientation-dependent nonlocal resistance response with the analysis based on the anamorphosis relations. We demonstrate that the nonlocal response can differ by orders of magnitude for different crystallographic directions even when the anisotropy is at most order-one, allowing us to extract accurate anisotropy values.

References in corpus (10)

• The Renaissance of Black Phosphorus
• Environmental instability of few-layer black phosphorus
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
• Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
• Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
• Plasmons and screening in monolayer and multilayer black phosphorus
• Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
• Giant Nonlocality near the Dirac Point in Graphene
• Topological Valley Currents in Gapped Dirac Materials

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• Mobility anisotropy in monolayer black phosphorus due to charged impurities
• The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
• Long-range nontopological edge currents in charge-neutral graphene
• Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
• Moiré Band Topology in Twisted Bilayer Graphene
• Phosphorene confined systems in magnetic field, quantum transport, and superradiance in the quasi-flat band
• Temperature dependent anisotropic charge carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus
• Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model
• Semiclassical Boltzmann transport theory of few-layer black phosphorus in various phases
• Electrostatic responses of anisotropic dielectric films