The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
arXiv:1609.05640 · doi:10.1021/jacs.5b12472
Abstract
Phosphorene, a new two-dimensional (2D) semiconductor, has received much interest due to its robust direct band gap and high charge mobility. Currently, however, phosphorene can only be produced by mechanical or liquid exfoliation, and it is still a significant challenge to directly epitaxially grow phosphorene, which greatly hinders its mass production and, thus, applications. In epitaxial growth, the stability of nanoscale cluster or flake on a substrate is crucial. Here, we perform ab initio energy optimizations and molecular dynamics simulations to explore the critical role of substrate on the stability of a representative phosphorene flake. Our calculations show that the stability of the phosphorene nanoflake is strongly dependent on the interaction strength between the nanoflake and substrate. Specifically, the strong interaction (0.75 eV/P atom) with Cu(111) substrate breaks up the phosphorene nanoflake, while the weak interaction (0.063 eV/P atom) with h-BN substrate fails to stabilize its 2D structure. Remarkably, we find that a substrate with a moderate interaction (about 0.35 eV/P atom) is able to stabilize the 2D characteristics of the nanoflake on a realistic time scale. Our findings here provide useful guidelines for searching suitable substrates for the directly epitaxial growth of phosphorene.
References in corpus (30)
- The electronic properties of graphene
- Black phosphorus field-effect transistors
- Phosphorene: A New 2D Material with High Carrier Mobility
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
- Isolation and characterization of few-layer black phosphorus
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- The Renaissance of Black Phosphorus
- Evidence of silicene in honeycomb structures of silicon on Ag(111)
- Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
- Liquid exfoliation of solvent-stabilised black phosphorus: applications beyond electronics
- Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- High quality sandwiched black phosphorus heterostructure and its quantum oscillations
- Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Growth of large-area single- and bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces
- Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge
- Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
- Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
- In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
- Topological Protected Dirac Cones in Compressed Bulk Black Phosphorus
- Atomistic Mechanisms of Nonlinear Graphene Growth on Ir Surface
- Breaking of symmetry in graphene growth on metal substrates
- Magic Graphene Clusters Formation in the graphene CVD growth process on Ru and Rh
- Nonlocal Response and Anamorphosis: the Case of Few-Layer Black Phosphorus
- Suppression of Grain Boundaries in Graphene Growth on Superstructured Mn-Cu(111) Surface
- Simulated scanning tunneling microscopy images of few-layer-phosphorus capped by graphene and hexagonal boron nitride monolayers
- A model for the epitaxial growth of graphene on 6H-SiC
Cited by in corpus (8)
- Highly Itinerant Atomic Vacancies in Phosphorene
- Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing
- Large Area Fabrication of Semiconducting Phosphorene by Langmuir Blodgett Assembly
- Phosphorene Edge Reconstruction by Self-Rolling
- Eliminating edge electronic and phonon states of phosphorene nanoribbon by unique edge reconstruction
- Anisotropic hybrid excitation modes in monolayer and double-layer phosphorene on polar substrates
- Direct observation of structural phase transformations during continuous phosphorus deposition on Cu(111)
- Vicinal metal surfaces as potential catalysts for phosphorene epitaxial growth