Interface effects on acceptor qubits in silicon and germanium

Abstract

Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement, the dielectric mismatch and the central cell effects. The presence of an interface puts constraints to the allowed symmetries and lead to the splitting of the ground state in two Kramers doublets [J. Mol et al, App. Phys. Lett. 106, 203110 (2015)]. Inversion symmetry breaking also implies parity mixing which affects the allowed optical transitions. Consequences for acceptor qubits are discussed.

9 pages, 7 figures

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Cited by in corpus (9)

• Quantum Computing with Acceptor Spins in Silicon
• Spin-orbit dynamics of single acceptor atoms in silicon
• Entanglement control and magic angles for acceptor qubits in Si
• Quadrupolar interactions between acceptor pairs in p-doped semiconductors
• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Acceptor-based qubit in silicon with tunable strain
• Heitler-London model for acceptor-acceptor interactions in doped semiconductors
• Thermal activation of low-density Ga implanted in Ge