Single-shot readout and relaxation of singlet/triplet states in exchange-coupled P electron spins in silicon
arXiv:1402.7148 · doi:10.1103/PhysRevLett.112.236801
Abstract
We present the experimental observation of a large exchange coupling eV between two P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time ms at zero magnetic field agrees with the theoretical prediction for -coupled P dimers in silicon. The time evolution of the 2-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of 2-qubit quantum logic gates with spins in silicon, and highlight the necessity to adopt gating schemes compatible with weak -coupling strengths.
Main: 5 pages, 4 figures. Supp.Mat: 1 page, 1 figure. Final version with journal reference
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