Two-spin relaxation of P-dimers in Silicon

Abstract

We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon interaction, lead to relaxation of the triplet states. Within the Heitler-London and effective mass approximations, we calculate the triplet relaxation rates in the presence of an applied magnetic field. This relaxation mechanism affects the resonance peaks in current Electron Spin Resonance (ESR) experiments on P-dimers. Moreover, the estimated time scales for the spin decay put an upper bound on the gate pulses needed to perform fault-tolerant two-qubit operations in donor-spin-based quantum computers (QCs).

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References in corpus (1)

• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization

Cited by in corpus (13)

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• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon
• Spin-orbit coupling induced two-electron relaxation in silicon donor pairs
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot