Silicon Donor Array as a Disordered One-Dimensional Electron Gas

Abstract

Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of the silicon conduction band combines with central cell corrections to the donor state Hamiltonian to translate atomic scale imperfections in donor placement into strongly disordered inter-donor hybridization. We present a simple model that is able to account accurately for central-cell corrections, and use it to assess the impact of donor-placement disorder on donor array properties in both itinerant and localized limits.

6 pages, 5 figures

References in corpus (5)

• Many body localization in Heisenberg XXZ magnet in a random field
• Precision tomography of a three-qubit donor quantum processor in silicon
• Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
• Valley interference and spin exchange at the atomic scale in silicon
• Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium