Adequacy of Si:P Chains as Fermi-Hubbard Simulators

Abstract

The challenge of simulating many-body models with analogue physical systems requires both experimental precision and very low operational temperatures. Atomically precise placement of dopants in Si permits the construction of nanowires by design. We investigate the suitability of these interacting electron systems as simulators of a fermionic extended Hubbard model on demand. We describe the single particle wavefunctions as a Linear Combination of Dopant Orbitals (LCDO). The electronic states are calculated within configuration interaction (CI). Due to the peculiar oscillatory behavior of each basis orbital, properties of these chains are strongly affected by the interdonor distance $R_0$, in a non-monotonic way. Ground state (T=0K) properties such as charge and spin correlations are shown to remain robust under temperatures up to 4K for specific values of $R_0$. The robustness of the model against disorder is also tested, allowing some fluctuation of the placement site around the target position. We suggest that finite donor chains in Si may serve as an analog simulator for strongly correlated model Hamiltonians. This simulator is, in many ways, complementary to those based on cold atoms in optical lattices---the trade-off between the tunability achievable in the latter and the survival of correlation at higher operation temperatures for the former suggests that both technologies are applicable for different regimes.

References in corpus (6)

• Spin and Charge Resolved Quantum Gas Microscopy of Antiferromagnetic Order in Hubbard Chains
• Observation of Spatial Charge and Spin Correlations in the 2D Fermi-Hubbard Model
• Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
• Site-resolved measurement of the spin-correlation function in the Hubbard model
• Many-body delocalization with random vector potentials
• Anderson Localization of Electrons in Silicon Donor Chains

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