Fast high-fidelity single-qubit gates for flip-flop qubits in silicon

Abstract

The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance coupling. Electron spin control near the interface, however, is likely to shorten the relaxation time by many orders of magnitude, reducing the overall qubit quality factor. Here, we theoretically study the multilevel system that is formed by the interacting electron and nuclear spins and derive analytical effective two-level Hamiltonians with and without periodic driving. We then propose an optimal control scheme that produces fast and robust single-qubit gates in the presence of low-frequency noise without relying on parametrically restrictive sweet spots. This scheme increases considerably both the relaxation time and the qubit quality factor.

Published version, 16 pages, 8 figures

References in corpus (10)

• Surface codes: Towards practical large-scale quantum computation
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Fidelity of quantum operations
• Electron spin decoherence in isotope-enriched silicon
• Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
• Donor spins in silicon for quantum technologies
• Nanoscale broadband transmission lines for spin qubit control
• Nonadiabatic corrections to fast dispersive multiqubit gates involving Z control
• Statistical exchange-coupling errors and the practicality of scalable silicon donor qubits

Cited by in corpus (2)

• Nonlinear flip-flop quantum walks through potential barriers
• Impact of Parallel Gating on Gate Fidelities in Linear, Square, and Star Arrays of Noisy Flip-Flop Qubits