92 citations · 592 across the 23 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 16 cited
Isotopic enrichment of silicon by high fluence Si ion implantation
D. Holmes, B. C. Johnson, C. Chua +8
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is re…
cond-mat.mtrl-sci2017★ 7 cited
Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
M. Usman, B. Voisin, J. Salfi +2
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…
cond-mat.mtrl-sci2016★ 55 cited
Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
Muhammad Usman, Juanita Bocquel, Joe Salfi +6
The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…