Inelastic Cotunneling Resonances in the Coulomb-Blockade Transport in Donor-Atom Transistors

Abstract

We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb blockade region. The cotunneling current appears like a resonant-tunneling current peak emerging from the excited state at the crossover between blockade and non-blockade regions. These cotunneling features are unique, since the inelastic-cotunneling currents have so far been reported either as a broader hump or as a continuous increment of current. This finding is ascribed purely due to excitation-related inelastic cotunneling involving the ground and excited states. Theoretical calculations were performed for a two-level quantum dot, supporting our experimental observation.

References in corpus (4)

• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
• Inelastic cotunneling in quantum dots and molecules with weakly broken degeneracies