264 citations · 612 across the 12 of their papers we have counts for
12 papers
Dopant metrology in advanced FinFETs
G. P. Lansbergen, R. Rahman, G. C. Tettamanzi +4
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of e…
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experim…
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum con…
Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen +4
Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one el…
Lifetime enhanced transport in silicon due to spin and valley blockade
G. P. Lansbergen, R. Rahman, J. Verduijn +6
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silico…
Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
M. J. Calderon, J. Verduijn, G. P. Lansbergen +3
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the c…