Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Abstract

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wavefunction. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

References in corpus (20)

• Silicon Quantum Electronics
• Cuba - a library for multidimensional numerical integration
• Solutions of the Two Dimensional Hubbard Model: Benchmarks and Results from a Wide Range of Numerical Algorithms
• Observation of antiferromagnetic correlations in the Hubbard model with ultracold atoms
• From Nagaoka's ferromagnetism to flat-band ferromagnetism and beyond: An introduction to ferromagnetism in the Hubbard model
• Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
• Superconductivity and the Pseudogap in the two-dimensional Hubbard model
• Exchange in silicon-based quantum computer architecture
• Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
• Quantum simulation of Fermi-Hubbard models in semiconductor quantum dot arrays
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Donor Electron Wave Functions for Phosphorus in Silicon: Beyond Effective Mass Theory
• Multivalley effective mass theory simulation of donors in silicon
• Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence
• Theory of one and two donors in Silicon
• Spin- and charge-density waves in the Hartree-Fock ground state of the two-dimensional Hubbard model
• Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
• Exact diagonalization of the Hubbard model on graphics processing units
• Nanoscale ferromagnetism in non-magnetic doped semiconductors
• Anderson Localization of Electrons in Silicon Donor Chains

Cited by in corpus (16)

• Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots
• Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices
• The impact of stochastic incorporation on atomic-precision Si:P arrays
• Roadmap on Atomic-scale Semiconductor Devices
• Valley filtering and spatial maps of coupling between silicon donors and quantum dots
• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation
• Scanned single-electron probe inside a silicon electronic device
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Many-Body Physics in Small Systems: Observing the Onset and Saturation of Correlation in Linear Atomic Chains
• 2D-3D crossover in a dense electron liquid in silicon
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
• Steady and dynamic magnetic phase transitions in interacting quantum dots arrays coupled with leads
• Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions
• Su-Schrieffer-Heeger-Hubbard model at quarter filling: effects of magnetic field and non-local interactions