Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Abstract

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wavefunction. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

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Cited by in corpus (7)

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• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
• Su-Schrieffer-Heeger-Hubbard model at quarter filling: effects of magnetic field and non-local interactions