2D-3D crossover in a dense electron liquid in silicon

Abstract

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm${}^{-2}$) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

arXiv comment9 pages, 4 figures, supplementary information

References in corpus (9)

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Cited by in corpus (2)

• Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
• Non-destructive X-ray imaging of patterned delta-layer devices in silicon