Weak Localization Thickness Measurements of Si:P Delta-Layers

Abstract

We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data shows that the effective thickness of a delta-layer can be obtained through a weak localization analysis of electrical transport measurements performed in perpendicular and parallel magnetic fields. An estimate of the diffusivity of phosphorous in silicon is obtained by applying this method to several samples annealed at 850 Celsius for intervals of zero to 15 minutes. With further refinements, this may prove to be the most precise method of measuring delta-layer widths developed to date, including that of Secondary Ion Mass Spectrometry analysis.

References in corpus (3)

• Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
• Random Berry Phase Magnetoresistance as a Probe of Interface Roughness in Si MOSFETs
• Quantum transport in parallel magnetic fields: A realization of the Berry-Robnik symmetry phenomenon

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