activity
20092018
most citedProbing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators

242 citations · 521 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2018★ 6 cited

2D-3D crossover in a dense electron liquid in silicon

Guy Matmon, Eran Ginossar, Byron J. Villis +9

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information…

cond-mat.mes-hall2012★ 11 cited

Feedback cooling of cantilever motion using a quantum point contact transducer

M. Montinaro, A. Mehlin, H. S. Solanki +4

We use a quantum point contact (QPC) as a displacement transducer to measure and control the low-temperature thermal motion of a nearby micromechanical cantilever. The QPC is inclu…

cond-mat.mes-hall2012★ 32 cited

Coupling between quantum Hall state and electromechanics in suspended graphene resonator

Vibhor Singh, Bushra Irfan, Ganesh Subramanian +6

Using graphene resonator, we perform electromechanical measurements in quantum Hall regime to probe the coupling between a quantum Hall (QH) system and its mechanical motion. Mecha…

cond-mat.mes-hall2011★ 9 cited

High Q electromechanics with InAs nanowire quantum dots

Hari S. Solanki, Shamashis Sengupta, Sudipta Dubey +7

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (S…

cond-mat.mes-hall2011★ 35 cited

Tunable thermal conductivity in defect engineered nanowires at low temperatures

Sajal Dhara, Hari S. Solanki, Arvind Pawan R. +7

We measure the thermal conductivity () of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 t…

cond-mat.mes-hall2011★ 20 cited

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Sajal Dhara, Shamashis Sengupta, Hari S. Solanki +5

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a…