7 citations · 14 across the 3 of their papers we have counts for
4 papers
Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
Nicolò D'Anna, Jamie Bragg, Aidan G. McConnell +12
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candida…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +8
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resis…
2D-3D crossover in a dense electron liquid in silicon
Guy Matmon, Eran Ginossar, Byron J. Villis +9
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information…