9 citations · 34 across the 7 of their papers we have counts for
7 papers
Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
Nicolò D'Anna, Jamie Bragg, Aidan G. McConnell +12
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candida…
Element-specific, non-destructive profiling of layered heterostructures
Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata +16
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightfor…
Emergence of highly coherent quantum subsystems of a noisy and dense spin system
A. Beckert, M. Grimm, N. Wili +6
Quantum sensors and qubits are usually two-level systems (TLS), the quantum analogs of classical bits which assume binary values '0' or '1'. They are useful to the extent to which…
Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon +11
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen r…
Precise determination of low energy electronuclear Hamiltonian for LiYHoF
A. Beckert, R. I. Hermans, M. Grimm +8
We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiYHoF, including their…
Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy
Steven Chick, Ben Murdin, Guy Matmon +1
Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 THz region, and in…
2D-3D crossover in a dense electron liquid in silicon
Guy Matmon, Eran Ginossar, Byron J. Villis +9
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information…