129 citations · 403 across the 14 of their papers we have counts for
15 papers
Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy
Mateus G. Masteghin, Toussaint Gervais, Steven K. Clowes +10
We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very hig…
Spin echo from erbium implanted silicon
Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta +3
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of…
Erbium implanted silicon for solid-state quantum technologies
Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta +6
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er i…
Giant non-linear susceptibility of hydrogenic donors in silicon and germanium
Nguyen H. Le, Grigory V. Lanskii, G. Aeppli +1
Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals.…
Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy
Steven Chick, Ben Murdin, Guy Matmon +1
Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 THz region, and in…
2D-3D crossover in a dense electron liquid in silicon
Guy Matmon, Eran Ginossar, Byron J. Villis +9
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information…