129 citations · 403 across the 14 of their papers we have counts for
8 papers · 1 filter
Erbium implanted silicon for solid-state quantum technologies
Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta +6
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er i…
Giant non-linear susceptibility of hydrogenic donors in silicon and germanium
Nguyen H. Le, Grigory V. Lanskii, G. Aeppli +1
Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals.…
2D-3D crossover in a dense electron liquid in silicon
Guy Matmon, Eran Ginossar, Byron J. Villis +9
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information…
Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
W. Wu, P. T. Greenland, A. J. Fisher +3
Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited s…
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
B. Wittmann, S. N. Danilov, V. V. Bel'kov +12
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasu…
Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
S. N. Danilov, B. Wittmann, P. Olbrich +12
We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. T…