External field control of donor electron exchange at the Si/SiO2 interface

Abstract

We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in the absence of local surface gates, and estimate the maximum planar density of donors allowed to avoid the formation of a 2-dimensional electron gas at the interface. We also calculate the times involved in single electron shuttling between the donor and the interface. For a donor pair, we find that under certain conditions the exchange coupling (i.e. 2-qubit operation) between the respective electron pair at the interface may be of the same order of magnitude as the coupling in GaAs-based two-electron double quantum dots where coherent spin manipulation and control has been recently demonstrated (for example for donors ~10 nm below the interface and \~40 nm apart, J~10^{-4} meV), opening the perspective for similar experiments to be performed in Si.

11 pages, 15 figures. Changes in Eq. 24 plus minor typos

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• Exchange coupling between silicon donors: the crucial role of the central cell and mass anisotropy
• Stark shift and field ionization of arsenic donors in ${}^{28}$Si-SOI structures
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• Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures
• Valley interference effects on a donor electron close to a Si/SiO2 interface
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• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices
• Single electron spin and its coherence in Si quantum computer architecture
• Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon
• Path integral simulation of exchange interactions in CMOS spin qubits
• Spin-orbit coupling induced two-electron relaxation in silicon donor pairs
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• A Computational Workflow for Designing Silicon Donor Qubits