Magnetic field-assisted manipulation and entanglement of Si spin qubits

Abstract

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.

arXiv comment4 pages, 4 figures. 1 ref and 1 footnote added

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Cited by in corpus (4)

• Orbital Stark effect and quantum confinement transition of donors in silicon
• External field control of donor electron exchange at the Si/SiO2 interface
• Quantum control and manipulation of donor electrons in Si-based quantum computing
• Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures