Quantum control and manipulation of donor electrons in Si-based quantum computing

Abstract

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.

Invited Presentation at the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro - Brazil, Jul 27-Aug 1, 2008. A paragraph added to the conclusions, 4 new references

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Cited by in corpus (8)

• Silicon Quantum Electronics
• Single-shot readout of an electron spin in silicon
• Silicon quantum processor with robust long-distance qubit couplings
• A Survey of Quantum Lyapunov Control Methods
• Two-electron states of a group V donor in silicon from atomistic full configuration interaction
• Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
• D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface
• 2-dimensional semiconductors pave the way towards dopant based quantum computing