Valley interference effects on a donor electron close to a Si/SiO2 interface
arXiv:0712.1823 · doi:10.1103/PhysRevB.77.155302
Abstract
We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much the same way as the exchange coupling oscillates with the interdonor distance. These oscillations disappear when the ground state at the interface is degenerate (corresponding to zero valley-orbit coupling).
7 pages, 5 figures
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Cited by in corpus (9)
- Silicon Quantum Electronics
- Silicon quantum processor with robust long-distance qubit couplings
- Orbital Stark effect and quantum confinement transition of donors in silicon
- Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
- Quantum Computing with Acceptor Spins in Silicon
- Impact of valley phase and splitting on readout of silicon spin qubits
- Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
- Quantum control and manipulation of donor electrons in Si-based quantum computing
- Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface