27 citations · 27 across the 1 of their papers we have counts for
4 papers
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Single-shot readout of an electron spin in silicon
Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg +12
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for th…
Probe and Control of the Reservoir Density of States in Single-Electron Devices
M. Mottonen, K. Y. Tan, K. W. Chan +11
We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two con…
Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor
Kuan Yen Tan, Kok Wai Chan, Mikko Möttönen +8
We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The…